Chip package with fan-out structure

ABSTRACT

A chip package is provided. The chip package includes a semiconductor die and a protection layer surrounding the semiconductor die. The chip package also includes a dielectric layer over the semiconductor die and the protection layer. The dielectric layer has an upper surface with cutting scratches. The chip package further includes a conductive layer over the dielectric layer and filling some of the cutting scratches.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a Divisional of U.S. application Ser. No.15/292,762, filed on Oct. 13, 2016, now U.S. Pat. No. 10,157,846, theentirety of which is incorporated by reference herein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Continuing advances in semiconductor manufacturing processeshave resulted in semiconductor devices with finer features and/or higherdegrees of integration. Functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilefeature size (i.e., the smallest component that can be created using afabrication process) has decreased. This scaling-down process generallyprovides benefits by increasing production efficiency and loweringassociated costs.

A chip package not only provides protection for semiconductor devicesfrom environmental contaminants, but also provides a connectioninterface for the semiconductor devices packaged therein. One smallertype of packaging for semiconductor devices is a chip-scale package(CSP), in which a semiconductor die is placed on a substrate.

New packaging technologies have been developed to further improve thedensity and functions of semiconductor dies. These relatively new typesof packaging technologies for semiconductor dies face manufacturingchallenges.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1N are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments.

FIGS. 2A-1 to 2C-1 are cross-sectional views of various stages of aprocess for forming a chip package, in accordance with some embodiments.

FIGS. 2A-2 to 2C-2 are top views of various stages of a process forforming a chip package, in accordance with some embodiments.

FIG. 3A is a top view of one of various stages of a process for forminga chip package, in accordance with some embodiments.

FIG. 3B is a cross-sectional view of one of various stages of a processfor forming a chip package, in accordance with some embodiments.

FIG. 3C is a cross-sectional view of one of various stages of a processfor forming a chip package, in accordance with some embodiments.

FIG. 4 is a cross-sectional view of one of various stages of a processfor forming a chip package, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. Additional operationscan be provided before, during, and/or after the stages described inthese embodiments. Some of the stages that are described can be replacedor eliminated for different embodiments. Additional features can beadded to the semiconductor device structure. Some of the featuresdescribed below can be replaced or eliminated for different embodiments.Although some embodiments are discussed with operations performed in aparticular order, these operations may be performed in another logicalorder.

FIGS. 1A-1N are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments. As shown inFIG. 1A, an adhesive layer 102 and a base layer 104 are deposited orlaminated over a carrier substrate 100, in accordance with someembodiments. In some embodiments, the carrier substrate 100 is used as atemporary support substrate. The carrier substrate 100 may be made of asemiconductor material, ceramic material, polymer material, metalmaterial, another suitable material, or a combination thereof. In someembodiments, the carrier substrate 100 is a glass substrate. In someother embodiments, the carrier substrate 100 is a semiconductorsubstrate, such as a silicon wafer.

The adhesive layer 102 may be made of glue, or may be a laminationmaterial, such as a foil. In some embodiments, the adhesive layer 102 isphotosensitive and is easily detached from the carrier substrate 100 bylight irradiation. For example, shining ultra-violet (UV) light or laserlight on the carrier substrate 100 is used to detach the adhesive layer102. In some embodiments, the adhesive layer 102 is alight-to-heat-conversion (LTHC) coating. In some other embodiments, theadhesive layer 102 is heat-sensitive. The adhesive layer 102 may bedetached using a thermal operation.

In some embodiments, the base layer 104 is a polymer layer or apolymer-containing layer. The base layer 104 may be a polybenzoxazole(PBO) layer, a polyimide (PI) layer, a solder resist (SR) layer, anAjinomoto buildup film (ABF), a die attach film (DAF), another suitablelayer, or a combination thereof. In some embodiments, the base layer 104includes multiple sub-layers. In some other embodiments, the base layer104 is not formed.

Afterwards, a seed layer 106 is deposited over the base layer 104, asshown in FIG. 1A in accordance with some embodiments. In someembodiments, the seed layer 106 is made of a metal material, such ascopper or titanium. In some embodiments, the seed layer 106 is depositedusing a physical vapor deposition (PVD) process, a chemical vapordeposition (CVD) process, a spin-on process, another applicable process,or a combination thereof. In some embodiments, the seed layer 106 may bemade of Ti, Ti alloy, Cu, Cu alloy, another suitable material, or acombination thereof. The Ti alloy or the Cu alloy may include silver,chromium, nickel, tin, gold, tungsten, another suitable element, or acombination thereof. In some embodiments, the seed layer 106 includesmultiple sub-layers.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the seed layer 106 is not formed.

As shown in FIG. 1B, a mask layer 108 is formed over the seed layer 106,in accordance with some embodiments. The mask layer 108 has multipleopenings 110 that expose portions of the seed layer 106. The openings110 of the mask layer 108 define the positions where conductivestructures, such as through package vias, will be formed. In someembodiments, the mask layer 108 is made of a photoresist material. Theopenings of the mask layer 108 may be formed by a photolithographyprocess. The photolithography process may include exposure anddevelopment operations.

As shown in FIG. 1C, conductive structures including conductivestructures 112A, 112B, 112C, and 112D are formed in the openings 110 ofthe mask layer 108, in accordance with some embodiments. In someembodiments, the conductive structures 112A, 112B, 112C, and 112Dinclude conductive pillars. In some embodiments, each of the conductivestructures 112A, 112B, 112C, and 112D has a linear sidewall. In someembodiments, the sidewalls of the conductive structures 112A, 112B,112C, and 112D are substantially perpendicular to the surface of theseed layer 106. In some embodiments, a top view of each of theconductive structures 112A, 112B, 112C, and 112D is substantiallycircular. In some embodiments, widths of the conductive structures 112A,112B, 112C, and 112D are substantially the same. In some otherembodiments, widths of some of the conductive structures 112A, 112B,112C, and 112D are different from each other.

In some embodiments, the conductive structures 112A, 112B, 112C, and112D are made of a metal material. The metal material may include Cu,Ti, Au, Co, Al, W, another suitable material, or a combination thereof.In some embodiments, the conductive structures 112A, 112B, 112C, and112D are made of a solder material that includes Sn. In some otherembodiments, the conductive structures 112A, 112B, 112C, and 112D aremade of a metal material that does not include Sn.

In some embodiments, the conductive structures 112A, 112B, 112C, and112D are formed using a plating process. The plating process may includean electroplating process, an electroless plating process, anotherapplicable process, or a combination thereof. However, many variationsand/or modifications can be made to embodiments of the disclosure. Insome other embodiments, the conductive structures 112A, 112B, 112C, and112D are formed using a chemical vapor deposition (CVD) process, aphysical vapor deposition (PVD) process, a spin-on process, anotherapplicable process, or a combination thereof.

In some embodiments, the conductive structures 112A, 112B, 112C, and112D are substantially as high as each other. However, embodiments ofthe disclosure are not limited thereto. In some other embodiments, oneor more of these conductive structures have a height different from thatof other conductive structures. As shown in FIG. 1C, the conductivestructures 112A, 112B, 112C, and 112D have heights H₁, H_(z), H₃, andH₄, respectively. In some embodiments, the heights H₁, H₂, H₃, and H₄are substantially the same. In some embodiments, some of the heights H₁,H₂, H₃, and H₄ are different from each other, as shown in FIG. 1C.

As shown in FIG. 1D, a cutting tool 113 is used to cut (mechanicallytrim) the upper portions of the conductive structures 112A, 112B, 112C,and 112D, in accordance with some embodiments. The upper portions of theconductive structures 112A, 112B, 112C, and 112D above an imaginary lineL will be shaved off by the cutting tool 113. The imaginary line L maybe set at a level that allows each of the conductive structures 112A,112B, 112C, and 112D to have a height of H₅ after being cut. In someembodiments, an upper portion of the mask layer 108 above the imaginaryline L and the upper portions of the conductive structures 112A, 112B,112C, and 112D are cut together using the cutting tool 113.

As shown in FIG. 1E, after the cutting operation, the top surfaces ofthe conductive structures 112A, 112B, 112C, and 112D are substantiallycoplanar with each other, in accordance with some embodiments. Each ofthe conductive structures 112A, 112B, 112C, and 112D has a height of H₅.In some embodiments, due to the cutting operation, the conductivestructures 112A, 112B, 112C, and 112D that originally had differentheights now have substantially the same height. In some embodiments,scratches may be left at the top surfaces of the conductive structures112A, 112B, 112C, and 112D after being cut by the cutting tool 113. Thescratches are formed by the cutting tool 113.

Even if the conductive structures 112A, 112B, 112C, and 112D do not havethe same height after deposition (e.g., through plating, CVD, or othersuitable forming methods), the cutting operation ensures the conductivestructures 112A, 112B, 112C, and 112D to have substantially the sameheight. The top surfaces of the conductive structures 112A, 112B, 112C,and 112D are substantially coplanar, which facilitates subsequentprocesses. In some cases, the plating process for forming the conductivestructures 112A, 112B, 112C, and 112D may not be required to beperformed in a very well controlled manner. In some embodiments, theplating process is performed at a relatively high speed. Accordingly,the cutting (mechanical trimming) operation enables the use of lessexpensive plating solution during fabrication process. Therefore, theprocess cost and time are significantly reduced.

As shown in FIG. 1F, the mask layer 108 is removed, in accordance withsome embodiments. Afterwards, the exposed portion of the seed layer 106(not covered by the conductive structures including 112A, 112B, 112C,and 112D) are removed, as shown in FIG. 1F in accordance with someembodiments. An etching process may be used to partially remove the seedlayer 106. The conductive structures including 112A, 112B, 112C, and112D may function as an etching mask during the etching of the seedlayer 106.

As shown in FIG. 1G, semiconductor dies including semiconductor dies122A and 122B are attached on the base layer 104, in accordance withsome embodiments. In some embodiments, the back sides of thesemiconductor dies 122A and 122B face the base layer 104 with the frontsides of the semiconductor dies 122A and 122B facing upwards. Anadhesive film 120 may be used to fix the semiconductor dies 122A and122B on the base layer 104. The adhesive film 120 may include a dieattach film (DAF), a glue, or another suitable film.

Each of the semiconductor dies 122A and 122B may include a semiconductorsubstrate 114, a dielectric layer 116, and conductive pads 118 at thefront side of the semiconductor die. In some embodiments, various deviceelements are formed in the semiconductor substrate 114. Examples of thevarious device elements include transistors (e.g., metal oxidesemiconductor field effect transistors (MOSFET), complementary metaloxide semiconductor (CMOS) transistors, bipolar junction transistors(BJT), high voltage transistors, high-frequency transistors, p-channeland/or n-channel field effect transistors (PFETs/NFETs), etc.), diodes,or other suitable elements.

The device elements are interconnected to form integrated circuitdevices through conductive features formed in the dielectric layer 116.The dielectric layer 116 may include multiple sub-layers. The conductivefeatures may include multiple conductive lines, conductive contacts, andconductive vias. The integrated circuit devices include logic devices,memory devices (e.g., static random access memories, SRAMs), radiofrequency (RF) devices, input/output (I/O) devices, system-on-chip (SoC)devices, other applicable types of devices, or a combination thereof. Insome embodiments, the semiconductor die 122A or 122B is a system-on-chip(SoC) chip that includes multiple functions.

The conductive pads 118 may be wider portions of some of the conductivelines formed on the dielectric layer 116 or embedded in the dielectriclayer 116. Therefore, the device elements in the semiconductor substrate114 may be electrically connected to other elements through theconductive pads 118 and other conductive features.

As shown in FIG. 1G, the seed layer 106 and each of the conductivestructures 112A, 112B, 112C, and 112D together have a total height H₆.The adhesive film 120 and each of the semiconductor dies 122A and 122Btogether have a total height H₇. In some embodiments, the heights H₆ andH₇ are substantially the same.

However, many variations and/or modifications can be made to embodimentsof the disclosure. In some embodiments, the heights H₆ and H₇ aredifferent from each other. In some embodiments, the height H₆ is greaterthan the height H₇. In some embodiments, the height difference betweenone of the conductive structures 112A, 112B, 112C, and 112D and one ofthe semiconductor dies 122A and 122B is substantially equal to thedifference between H₆ and H₇. In some embodiments, the height differenceis in a range from about 2 μm to about 3 μm.

As shown in FIG. 1H, a protection layer 124 is formed over the carriersubstrate 100 to surround the conductive structures 112A, 112B, 112C,and 112D and the semiconductor dies 122A and 122B, in accordance withsome embodiments. In some embodiments, the protection layer 124 coverssidewalls of the conductive structures 112A, 112B, 112C, and 112D andthe semiconductor dies 122A and 122B.

In some embodiments, the protection layer 124 exposes (or does notcover) the top surfaces of the conductive structures 112A, 112B, 112C,and 112D and the semiconductor dies 122A and 122B. In some embodiments,the conductive structures 112A, 112B, 112C, and 112D penetrate throughthe protection layer 124. The conductive structures 112A, 112B, 112C,and 112D are used as through package vias (TPVs) or through integratedfan-out vias (TIVs). In some embodiments, the protection layer 124includes a polymer material. In some embodiments, the protection layer124 includes a molding compound material. The molding compound materialmay include an epoxy-based resin with fillers dispersed therein.

In some embodiments, the protection layer 124 is formed by injecting amolding compound material over the carrier substrate 100. In someembodiments, after or during the injecting of the molding compoundmaterial, the molding compound material does not cover the top surfacesof the conductive structures 112A, 112B, 112C, and 112D and/or thesemiconductor dies 122A and 122B.

In some embodiments, a liquid molding compound material is disposed overthe carrier substrate 100 to encapsulate the conductive structures 112A,112B, 112C, and 112D and the semiconductor dies 122A and 122B. In someembodiments, a thermal process is then applied to harden the liquidmolding compound material and to transform it into the protection layer124. In some embodiments, the thermal process is performed at atemperature in a range from about 200 degrees C. to about 230 degrees C.The operation time of the thermal process may be in a range from about0.5 hour to about 3 hours.

In some embodiments, a mold is used to assist in the formation of theprotection layer 124. FIGS. 2A-1 to 2C-1 are cross-sectional views ofvarious stages of a process for forming the protection layer 124 of achip package, in accordance with some embodiments. FIGS. 2A-2 to 2C-2are top views of various stages of a process for forming the protectionlayer 124 a chip package, in accordance with some embodiments.

As shown in FIG. 2A-1, a mold 200 is disposed over the carrier substrate100, in accordance with some embodiments. In some embodiments, a space230 is formed between the mold 200 and the carrier substrate 100, asshown in FIG. 2A-1. In some embodiments, the mold 200 includes a sealingelement 201. The sealing element 201 may be used to cover the peripheralregion of the carrier substrate 100. In some embodiments, the sealingelement 201 is a sealing ring. The sealing element 201 may also be usedas a settle element that affixes the carrier substrate 100 under themold 200.

However, many variations and/or modifications can be made to embodimentsof the disclosure. In some other embodiments, the sealing element 201 isnot formed.

In some embodiments, the mold 200 includes a release film 202. The space230 is surrounded by the carrier substrate 100, the sealing element 201,and the release film 202. In some embodiments, the release film 202 ismade of a material that has a poor adhesion with a molding compoundmaterial used for forming the protection layer 124. In some embodiments,the release film 202 is in direct contact with the conductive structures112A, 112B, 112C, and 112D after the mold 200 is disposed over thecarrier substrate 100. In some embodiments, the release film 202 is alsoin direct contact with the semiconductor dies 122A and 122B.

However, many variations and/or modifications can be made to embodimentsof the disclosure. In some other embodiments, the release film 202 isnot formed.

In some embodiments, the mold has one or more openings 206. Each of theopenings 206 may be used to allow a flow of a molding compound material204 to be injected into the mold 200. In some embodiments, one or someof the openings 206 are used to allow the flow of the molding compoundmaterial 204 to be led out of the mold 200. In some embodiments, each ofthe openings 206 is used for letting the flow of the molding compoundmaterial 204 enter the mold 200. In some other embodiments, the mold 200has only one opening 206 that allow the flow of the molding compoundmaterial 204 to enter the space 230.

There are a number of semiconductor dies 122 disposed over the carriersubstrate 100, as shown in FIG. 2A-2 in accordance with someembodiments. As shown in FIGS. 2A-1 and 2A-2, there is no moldingcompound material injected over the carrier substrate 100 at this stage,in accordance with some embodiments.

Afterwards, the molding compound material 204 is injected into the space230 between the mold 200 and the carrier substrate 100, as shown inFIGS. 2B-1 and 2B-2, in accordance with some embodiments. Some of theconductive structures including the conductive structures 112A and 112Dare surrounded by the molding compound material 204, as shown in FIG.2B-1 in accordance with some embodiments. Some of the semiconductor dies122 including the semiconductor dies 122A and 122B are partially orcompletely surrounded by the molding compound material 204, as shown inFIGS. 2B-1 and 2B-2 in accordance with some embodiments. In someembodiments, the release film 202 is in direct contact with theconductive structures 112A, 112B, 112C, and 112D during the injecting ofthe molding compound material 204. In some embodiments, the release film202 is also in direct contact with the semiconductor dies 122 includingthe semiconductor dies 122A and 122B during the injecting of the moldingcompound material 204.

Afterwards, the injected molding compound material 204 completely fillsthe space 230 between the mold 200 and the carrier substrate 100, asshown in FIGS. 2C-1 and 2C-2, in accordance with some embodiments. Insome embodiments, the mold 200 is removed, and the molding compoundmaterial 204 is cured to become the protection layer 124, as shown inFIG. 1H. In some embodiments, the molding compound material 204 is curedafter the removal of the mold 200. In some other embodiments, themolding compound material 204 is cured before the removal of the mold200. In some other embodiments, a thermal operation is performed beforethe removal of the mold 200. Afterwards, another thermal operation isused to complete the curing of the molding compound material 204. As aresult, the protection layer 124 is formed.

In some embodiments, during the injecting of the molding compoundmaterial 204 for forming the protection layer 124, the molding compoundmaterial 204 does not cover the top surfaces of the conductingstructures 112A, 112B, 112C, and 112D and/or the semiconductor dies 122Aand 122B due to the mold 200. As a result, the top surfaces of theconducting structures 112A, 112B, 112C, and 112D and the semiconductordies 122A and 122B are not covered by the protection layer 124, as shownin FIG. 1H. In some embodiments, it is not necessary for the protectionlayer 124 to be thinned since the conductive structures 112A, 112B,112C, and 112D and the conductive pads 118 of the semiconductor dies122A and 122B have been exposed without being covered by the protectionlayer 124.

In some other cases, the mold 200 is not used. In these cases, theconductive structures and the semiconductor dies are covered by themolding compound material. Afterwards, a thinning process may need to beperformed to thin down the protection layer so as to expose theconductive structures and the semiconductor dies. An additionalpassivation layer (such as a PBO layer) and conductive pillars that cansustain the thinning process may need to have been formed previouslyover each of the semiconductor dies to ensure conductive routes to thesemiconductor dies. Fabrication cost and process time are thereforehigh.

In some embodiments where the mold 200 is used, since no thinningprocess to the protection layer 124 is required, fabrication cost andprocess time are reduced. Damage due to the thinning process may also beprevented. In some embodiments, no additional passivation layer orconductive pillars needs to be formed on the semiconductor dies, and sothe fabrication cost and process time are reduced further.

In some embodiments, the adhesion between the molding compound material204 and the release film 202 is poor. Therefore, the molding compoundmaterial 204 may be prevented from adhering on the mold during thesubsequent removal of the mold 200. After the removal of the mold 200,recesses may be formed at the surface of the molding compound material204. As a result, there are also some recesses 126 formed at the surfaceof the protection layer 124 after the molding compound material 204 iscured to form the protection layer 124.

As shown in FIG. 1H, the protection layer 124 has recesses 126, inaccordance with some embodiments. Some of the recesses 126 are betweenthe semiconductor die 122A or 122B and one of the conductive structures112A, 112B, 112C, and 112D. Some of the recesses 126 are between two ofthe conductive structures, such as between the conductive structures112B and 112C. As shown in FIG. 1H, one of the recesses 126 has a depthD. In some embodiments, the depth D is in a range from about 3 μm toabout 10 μm. For example, the depth D may be about 7 μm.

Afterwards, an interconnection structure including multiple dielectriclayers and multiple conductive layers is formed over the structure shownin FIG. 1H. As shown in FIG. 1I, a dielectric layer 128 a is formed overthe protection layer 124, the conductive structures 112A-112D, and thesemiconductor dies 122A and 122B. In some embodiments, the dielectriclayer 128 a is made of one or more polymer materials. The dielectriclayer 128 a may be made of polybenzoxazole (PBO), polyimide (PI),another suitable material, or a combination thereof. In someembodiments, the dielectric layer 128 a is formed using a spin coatingprocess, a spray coating process, another applicable process, or acombination thereof.

As shown in FIG. 1I, the top surface of the dielectric layer 128 a mayhave a surface morphology similar to that below the dielectric layer 128a. The dielectric layer 128 a may also have recesses at positions thatcorrespond to the recesses 126 formed at the surface of the protectionlayer 124. As shown in FIG. 1I, the dielectric layer 128 a may have anuneven top surface.

As shown in FIG. 1I, a cutting tool 199 is provided and will be used tomechanically trim off an upper portion of the dielectric layer 128 a toimprove the flatness of the dielectric layer 128 a, in accordance withsome embodiments. For example, an upper portion of the dielectric layer128 a above an imaginary line L′ will be cut.

As shown in FIG. 1J, after the dielectric layer 128 a is partially cut,the remaining portion of the dielectric layer 128 a has a substantiallyplanarized top surface. The dielectric layer 128 a with thesubstantially planarized top surface may facilitate subsequent processessuch as a patterning process and a deposition process.

In some embodiments, the surface of the dielectric layer 128 a is notperfectly planarized. In some embodiments, there are one or more cuttingscratches formed on the surface of the dielectric layer 128 a. Thecutting scratches may be formed by the partial cutting of the upperportion of the dielectric layer 128 a.

FIG. 3A is a top view of one of various stages of a process for forminga chip package, in accordance with some embodiments. In someembodiments, FIG. 3A is a top view of the structure shown in FIG. 1J. Asshown in FIG. 3A, a number of cutting scratches 302 are formed on thesurface of the dielectric layer 128 a after being cut by the cuttingtool 199. In some embodiments, the structure shown in FIG. 1I is rotatedwhile being cut by the cutting tool 199. As a result, each of thecutting scratches 302 has a curved track. In some embodiments, thestructure shown in FIG. 1I is moved towards the cutting tool 199 step bystep. For example, after a portion of the dielectric layer 128 a is cutby the cutting tool 199 for a predetermined period of time, thestructure shown in FIG. 1I is moved towards the cutting tool 199 so thatanother portion of the dielectric layer 128 a is cut. In someembodiments, the intervals between the cutting scratches 302 aresubstantially the same because the distances between each step while thestructure shown in FIG. 1I is moving towards the cutting tool 199 aresubstantially the same.

As shown in FIG. 1K, the dielectric layer 128 a is patterned to formmultiple openings 129, in accordance with some embodiments. In someembodiments, one of the openings 129 exposes the conductive structure112A. In some embodiments, one of the openings 129 exposes conductivefeatures (such as the conductive pads 118) of the semiconductor die122A. In some embodiments, the openings 129 are formed using aphotolithography process, a laser drilling process, another applicableprocess, or a combination thereof. Although the top surface of thedielectric layer 128 a is formed with some cutting scratches 302, thetop surface of the dielectric layer 128 a is still substantially planar,which may facilitate subsequent patterning processes and/or depositionprocesses. Therefore, the patterning process for forming the openings129 becomes easier.

In the embodiments illustrated in FIGS. 1I-1K, the dielectric layer 128a is patterned to form the openings 129 after the upper portion of thedielectric layer 128 a is cut for planarization. However, manyvariations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the dielectric layer 128 a ispatterned to form the openings 129 before the upper portion of thedielectric layer 128 a is cut for planarization.

FIG. 4 is a cross-sectional view of one of various stages of a processfor forming a chip package, in accordance with some embodiments. In someembodiments, before being planarized, the dielectric layer 128 a ispatterned to form openings 129′. Some of the openings 129′ expose theconductive structures 112A-112D, and some of the openings 129′ exposethe conductive features (such as the conductive pads 118) of thesemiconductor dies 122A and 122B. Afterwards, the cutting tool 199 isused to partially remove the dielectric layer, as shown in FIG. 4 inaccordance with some embodiments. As a result, a structure similar tothat shown in FIG. 1K is formed.

Afterwards, conductive layers 130 a are formed over the dielectric layer128 a, as shown in FIG. 1L in accordance with some embodiments. In someembodiments, the conductive layer 128 a fills the opening 129. In someembodiments, one of the conductive layers 130 a is electricallyconnected to the conductive structure 112A through one of the openings129. In some embodiments, one of the conductive layers 130 a iselectrically connected to the conductive feature (such as the conductivepad 118) of the semiconductor die 122A through one of the openings 129.In some embodiments, the conductive structure 112A is electricallyconnected to the conductive pad 118 of the semiconductor die 122Athrough one of the conductive layers 130 a.

FIG. 3B is a cross-sectional view of one of various stages of a processfor forming a chip package, in accordance with some embodiments. In someembodiments, FIG. 3B is an enlarged view near an interface between oneof the conductive layers 130 a and the dielectric layer 128 a. As shownin FIG. 3B, there are a number of cutting scratches 302 formed on thesurface of the dielectric layer 128 a. In some embodiments, theconductive layers 130 a fill some of the cutting scratches (or scoringmarks) 302, as shown in FIG. 3B. In some embodiments, the interfacebetween the conductive layers 130 a and the dielectric layer 128 a hasan undulate morphology.

In some embodiments, each of the cutting scratches 302 has a width W₁ orW₂ that is in a range from about 20 μm to about 60 μm. In someembodiments, the widths W₁ and W₂ are substantially the same. In someembodiments, each of the cutting scratches 309 has a depth h that is ina range from about 0.05 μm to about 0.1 μm.

As shown in FIG. 1M, a dielectric layer 128 b is formed over thedielectric layer 128 a and the conductive layers 130 a, in accordancewith some embodiments. In some embodiments, the material and formationmethod of the dielectric layer 128 b is the same as or similar to thoseof the dielectric layer 128 a. However, embodiments of the disclosureare not limited thereto. In some other embodiments, the dielectric layer128 b is made of a dielectric material different from that of thedielectric layer 128 a. In some embodiments, the dielectric layer 128 bis made of silicon oxide or the like using a deposition process, such asa chemical vapor deposition (CVD) process.

FIG. 3C is a cross-sectional view of one of various stages of a processfor forming a chip package, in accordance with some embodiments. In someembodiments, FIG. 3C is an enlarged view near an interface between thedielectric layer 128 b and the dielectric layer 128 a. In someembodiments, the dielectric layer 128 b fills some of the cuttingscratches 302, as shown in FIG. 3C. In some embodiments, the interfacebetween the dielectric layer 128 b and the dielectric layer 128 a has anundulate morphology.

Afterwards, multiple dielectric layers including a dielectric layer 128c and a passivation layer 132 and multiple conductive layers includingconductive layers 130 b and 130 c are formed, as shown in FIG. 1M inaccordance with some embodiments. In some embodiments, conductive bumps134 are formed. An under bump metallurgy (UBM) layer (not shown) may beformed between the conductive bumps 134 and the conductive layers 130 c.Because the dielectric layer 128 a is cut previously to have asubstantially planar top surface, the subsequent formation of elementsover the dielectric layer 128 a may become easier.

Afterwards, the structure shown in FIG. 1M is placed upside down on asupport element, in accordance with some embodiments. Then, the carriersubstrate 100 and adhesive layer 102 are removed. Afterwards, a dicingprocess is performed to separate the structure as shown in FIG. 1M intomultiple chip packages, as shown in FIG. 1N in accordance with someembodiments. As a result, a chip package with a fan-out structure isformed.

In some embodiments, one or more elements are stacked on or bonded ontothe structure as shown in FIG. 1N before the dicing process. As shown inFIG. 1N, another element 136 is stacked over the structure shown in FIG.1N, in accordance with some embodiments. The element 136 may include achip package, a semiconductor die, one or more passive devices, anothersuitable structure, or a combination thereof.

In some embodiments, conductive connectors 138 are formed between theelement 136 and the conductive structures such as the conductivestructures 112A and 112B. Electrical connections between the element 136and the semiconductor die 122A may therefore be established. In someembodiments, the base layer 104 is patterned to form openings thatexpose the seed layer 106 connecting the conductive structures 112A and112B. The conductive connectors 138 may be formed in the openings andelectrically connected to other conductive features of the element 136.In some embodiments, the conductive connectors include solder bumps,solder balls, conductive pillars, conductive pillars that contain notin, another suitable structure, or a combination thereof.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the element 136 is stacked before thedicing process. In some other embodiments, the element 136 is stackedafter the dicing process.

Embodiments of the disclosure form a chip package having a semiconductordie and multiple conductive structures. The conductive structurespenetrate through a protection layer (or a molding compound layer) thatsurrounds the semiconductor die and the conductive structures. A mold isused to assist in the formation of the protection layer. The protectionlayer may not need to be thinned to expose the conductive structuresand/or conductive pads of the semiconductor die. Fabrication cost andprocess time are significantly reduced. Damage due to the thinningprocess may also be prevented. Interconnection structure is formed overthe protection layer and the semiconductor die for electricalconnection. A cutting process is used to provide a dielectric layer ofthe interconnection structure on the protection layer and thesemiconductor die with a substantially planar top surface, whichfacilitates subsequent formation of other elements including otherdielectric layers and other conductive layers. The quality andreliability of the chip package are significantly improved.

In accordance with some embodiments, a method for forming a chip packageis provided. The method includes disposing a semiconductor die over acarrier substrate and forming a protection layer over the carriersubstrate to surround the semiconductor die. The method also includesforming a dielectric layer over the protection layer and thesemiconductor die. The method further includes cutting an upper portionof the dielectric layer to improve flatness of the dielectric layer. Inaddition, the method includes forming a conductive layer over thedielectric layer after cutting the upper portion of the dielectriclayer.

In accordance with some embodiments, a method for forming a chip packageis provided. The method includes forming a molding compound layer tosurround a semiconductor die and forming a dielectric layer over themolding compound layer and the semiconductor die. The method alsoincludes partially cutting the dielectric layer such that the dielectriclayer is substantially planarized. The method further includes forming aconductive layer over the dielectric layer after the dielectric layer issubstantially planarized.

In accordance with some embodiments, a chip package is provided. Thechip package includes a semiconductor die and a protection layersurrounding the semiconductor die. The chip package also includes adielectric layer over the semiconductor die and the protection layer,and the dielectric layer has an upper surface with cutting scratches.The chip package further includes a conductive layer over the dielectriclayer and filling some of the cutting scratches.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A chip package, comprising: a semiconductor die;a protection layer surrounding the semiconductor die; a dielectric layerover the semiconductor die and the protection layer, wherein thedielectric layer has an upper surface with cutting scratches, whereinbottoms of the cutting scratches are positioned at height levels thatare lower than a topmost surface of the dielectric layer and higher thana topmost surface of the semiconductor die; and a conductive layer overthe dielectric layer and filling some of the cutting scratches.
 2. Thechip package as claimed in claim 1, further comprising a conductivestructure in the protection layer and separated from the semiconductordie by a portion of the protection layer, wherein the protection layerhas a recessed portion between the semiconductor die and the conductivestructure.
 3. The chip package as claimed in claim 2, wherein thedielectric layer fills the recessed portion of the protection layer. 4.The chip package as claimed in claim 2, wherein a top surface of theconductive structure is between the topmost surface of the dielectriclayer and a bottommost surface of the dielectric layer.
 5. The chippackage as claimed in claim 1, wherein an interface between theconductive layer and the dielectric layer has an undulate morphology. 6.The chip package as claimed in claim 1, wherein widths of the cuttingscratches are substantially the same.
 7. The chip package as claimed inclaim 1, wherein each of the cutting scratches has a width in a rangefrom about 20 μm to about 60 μm, and each of the cutting scratches has adepth in a range from about 0.05 μm to about 0.1 μm.
 8. The chip packageas claimed in claim 1, further comprising a second dielectric layer overthe dielectric layer, wherein the second dielectric layer fills some ofthe scratches that are not filled with the conductive layer.
 9. The chippackage as claimed in claim 1, wherein intervals between the cuttingscratches are substantially the same.
 10. The chip package as claimed inclaim 1, wherein the conductive layer is in direct contact withsidewalls of some of the cutting scratches.
 11. A chip package,comprising: a semiconductor die; a protection layer surrounding thesemiconductor die; a dielectric layer over the semiconductor die and theprotection layer; and a conductive layer over the dielectric layer,wherein the conductive layer has a plurality of protruding portionsextending into the dielectric layer, and bottoms of the protrudingportions are positioned at height levels that are lower than a topmostsurface of the dielectric layer and higher than a topmost surface of thesemiconductor die.
 12. The chip package as claimed in claim 11, whereinwidths of the protruding portions of the conductive layer aresubstantially the same.
 13. The chip package as claimed in claim 11,wherein each of the protruding portions of the conductive layer has awidth in a range from about 20 μm to about 60 μm, and each of theprotruding portions of the conductive layer has a height in a range fromabout 0.05 μm to about 0.1 μm.
 14. The chip package as claimed in claim11, further comprising a second dielectric layer over the dielectriclayer, wherein the second dielectric layer has a plurality of secondprotruding portions extending into the dielectric layer.
 15. The chippackage as claimed in claim 14, wherein a width of each of theprotruding portions of the conductive layer is substantially equal to awidth of each of the protruding portions of the second dielectric layer.16. A chip package, comprising: a semiconductor die; a protection layersurrounding the semiconductor die; a dielectric layer over thesemiconductor die and the protection layer; and a conductive layer overthe dielectric layer, wherein an interface between the conductive layerand the dielectric layer has an undulate morphology, and bottoms of theinterface with the undulated morphology are positioned at height levelsthat are lower than a topmost surface of the dielectric layer and higherthan a topmost surface of the semiconductor die.
 17. The chip package asclaimed in claim 16, further comprising a second dielectric layer overthe dielectric layer and the conductive layer, wherein an interfacebetween the second dielectric layer and the dielectric layer has asecond undulate morphology.
 18. The chip package as claimed in claim 17,wherein the undulate morphology and the second undulate morphology aresubstantially the same.
 19. The chip package as claimed in claim 16,further comprising a conductive structure in the protection layer andseparated from the semiconductor die by a portion of the protectionlayer, wherein the protection layer has a recessed portion between thesemiconductor die and the conductive structure.
 20. The chip package asclaimed in claim 16, further comprising a conductive structure in theprotection layer and separated from the semiconductor die by a portionof the protection layer, wherein a top surface of the conductivestructure is between the topmost surface of the dielectric layer and abottommost surface of the dielectric layer.